SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER FOR HIGH FREQUENCY ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor wafer which has a nitride semiconductor film formed on a supporting substrate such as a silicon substrate with an epitaxial layer formed on the nitride semiconductor film.

SOLUTION: The semiconductor wafer includes a supporting substrate, a nitride semiconductor thin film provided on a surface of the supporting substrate, and a nitride semiconductor epitaxial layer formed through vapor-phase growth on the nitride semiconductor thin film. In this semiconductor wafer, the nitride semiconductor thin film is a GaN thin film produced by peeling off from a GaN substrate with an ion-implanted layer provided in the GaN substrate as a boundary, wherein the GaN thin film has a (000-1) nitrogen surface side on the supporting substrate side and a (0001) Ga surface side as a vapor-phase growth face of the nitride semiconductor epitaxial layer.

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