| 摘要 |
An ion implantation distribution generation method for causing a computer to generate an ion implantation distribution, the method causing the computer to perform: generating distributions related to Rp lines each representing a range projection Rp in a surface subjected to ion implantation in a device structure of a semiconductor integrated circuit; drawing the Rp lines on a two-dimensional diagram corresponding to an ion implantation condition; and generating, for each of the Rp lines, a two-dimensional impurity concentration distribution in accordance with two-dimensional vector coordinates provided to the Rp line.
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