发明名称 |
SEMICONDUCTOR MEMORY APPARATUS WITH POWER-MESHED STRUCTURE |
摘要 |
A semiconductor memory apparatus includes a plurality of banks each having a plurality of cell mats; a plurality of power lines disposed over predetermined portions of each of the plurality of banks; a column control region disposed adjacent to at least one of sides of each bank which are perpendicular to an extending direction of the power lines; and a conductive plate disposed over the column control region and electrically connected to the plurality of power lines.
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申请公布号 |
US2011235385(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US20100843647 |
申请日期 |
2010.07.26 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JUNG BOO HO;LEE JUN HO;KIM HYUN SEOK;CHO SUN KI;KIM YANG HEE;KIM YOUNG WON |
分类号 |
G11C5/02 |
主分类号 |
G11C5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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