发明名称 SEMICONDUCTOR MEMORY APPARATUS WITH POWER-MESHED STRUCTURE
摘要 A semiconductor memory apparatus includes a plurality of banks each having a plurality of cell mats; a plurality of power lines disposed over predetermined portions of each of the plurality of banks; a column control region disposed adjacent to at least one of sides of each bank which are perpendicular to an extending direction of the power lines; and a conductive plate disposed over the column control region and electrically connected to the plurality of power lines.
申请公布号 US2011235385(A1) 申请公布日期 2011.09.29
申请号 US20100843647 申请日期 2010.07.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG BOO HO;LEE JUN HO;KIM HYUN SEOK;CHO SUN KI;KIM YANG HEE;KIM YOUNG WON
分类号 G11C5/02 主分类号 G11C5/02
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