| 摘要 |
A semiconductor device according to the present invention includes: a cell active region including a p-base layer being an active layer of a second conductivity type that is diffused above a high concentration n-type substrate being a semiconductor substrate of a first conductivity type; and a p-well layer being a first well region of the second conductivity type having a ring shape, which is adjacent to the p-base layer, is diffused above the high concentration n-type substrate so as to surround the cell active region, and serves as a main junction part of a guard ring structure, wherein in a region on a surface of the p-well layer other than both ends, a trench region that is a ring-shaped recess having a tapered side surface is formed along the ring shape of the p-well layer 4, the side surface widening upward.
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