| 摘要 |
A deposition process involves the formation of multicomponent semiconductor layers, in particular III-V epitaxial layers, on a substrate. Due to pyrolytic decomposition inside the reaction chamber, one of the process gases forms a first decomposition product. Together with a second decomposition product of a second process gas, the decomposition products form a layer on the surface of a heated substrate and also adhere to surfaces of the process chamber. To remove these adherences, during an etching step a purge gas containing a reactive substance formed by free radicals is introduced into the process chamber. The etching step may be performed before or after the deposition process.
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