发明名称 |
OPTOELECTRONIC SUBSTRATE AND METHODS OF MAKING SAME |
摘要 |
A method of fabricating a device by providing an auxiliary substrate having a metal nitride layer disposed thereon where the nitride layer has a nitrogen face and an opposite face and a dislocation density that is less than about 106, with the nitrogen face of the nitride layer facing the auxiliary substrate; depositing at least one epitaxial nitride layer on the exposed opposite face of the nitride layer of the structure; depositing a further metal layer over at least a portion of the epitaxial nitride layer(s); bonding a final substrate on the deposited metal layer; and removing the auxiliary substrate to form the device from the final substrate and deposited layers. Preferably, the device that is formed includes a LED or laser.
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申请公布号 |
US2011237008(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US201113154510 |
申请日期 |
2011.06.07 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
LETERTRE FABRICE;FAURE BRUCE |
分类号 |
H01L33/22;H01L33/00 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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