发明名称 METHOD FOR SLICING SYNTHETIC CORUNDUM SINGLE-CRYSTAL INGOT
摘要 <p>The present invention relates to a method for slicing an ingot that can reduce slicing time and wire consumption when slicing a synthetic corundum single-crystal ingot having an R-axis direction. According to the present invention, the method for slicing an ingot is a method in which a cylindrical ingot having an R face (1-102) as the bottom face is sliced in a wafer shape, and the ingot is sliced in directions excluding directions parallel to a [-1-120] direction, a [11-20] direction, a [-1101] direction, and a [1-10-1] direction. In particular, the ingot would be more easily sliced if the ingot is cut in direction orthogonal to the face direction [1-102] of the bottom face thereof, while also being sliced at a direction parallel to one of the directions, the directions which form angles of 30°-60°, 120°-150°, 210°-240°, and 300°-330° with respect to the [-1-120] direction.</p>
申请公布号 WO2011118864(A1) 申请公布日期 2011.09.29
申请号 WO2010KR01879 申请日期 2010.03.26
申请人 CRYSTAL-ON CO., LTD.;KANG, JIN-KI;MA, JAE-YOUNG;PARK, HONG-JIN;LEE, KYOUNG-HO 发明人 KANG, JIN-KI;MA, JAE-YOUNG;PARK, HONG-JIN;LEE, KYOUNG-HO
分类号 H01L21/301;B24B27/06;B28D5/04;H01L21/304 主分类号 H01L21/301
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