发明名称 |
METHOD FOR SLICING SYNTHETIC CORUNDUM SINGLE-CRYSTAL INGOT |
摘要 |
<p>The present invention relates to a method for slicing an ingot that can reduce slicing time and wire consumption when slicing a synthetic corundum single-crystal ingot having an R-axis direction. According to the present invention, the method for slicing an ingot is a method in which a cylindrical ingot having an R face (1-102) as the bottom face is sliced in a wafer shape, and the ingot is sliced in directions excluding directions parallel to a [-1-120] direction, a [11-20] direction, a [-1101] direction, and a [1-10-1] direction. In particular, the ingot would be more easily sliced if the ingot is cut in direction orthogonal to the face direction [1-102] of the bottom face thereof, while also being sliced at a direction parallel to one of the directions, the directions which form angles of 30°-60°, 120°-150°, 210°-240°, and 300°-330° with respect to the [-1-120] direction.</p> |
申请公布号 |
WO2011118864(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
WO2010KR01879 |
申请日期 |
2010.03.26 |
申请人 |
CRYSTAL-ON CO., LTD.;KANG, JIN-KI;MA, JAE-YOUNG;PARK, HONG-JIN;LEE, KYOUNG-HO |
发明人 |
KANG, JIN-KI;MA, JAE-YOUNG;PARK, HONG-JIN;LEE, KYOUNG-HO |
分类号 |
H01L21/301;B24B27/06;B28D5/04;H01L21/304 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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