发明名称 |
METHOD TO SELECTIVELY POLISH SILICON CARBIDE FILMS |
摘要 |
The present invention provides a method for selectively removing silicon carbide from the surface of a substrate in preference to silicon dioxide. The method comprises abrading a surface of substrate with a polishing composition that comprises a particulate abrasive, at least one acidic buffering agent, and an aqueous carrier. |
申请公布号 |
KR20110106864(A) |
申请公布日期 |
2011.09.29 |
申请号 |
KR20117015241 |
申请日期 |
2009.12.04 |
申请人 |
CABOT MICROELECTRONICS CORPORATION |
发明人 |
WARD WILLIAM;JOHNS TIMOTHY |
分类号 |
H01L21/304;B24B37/00 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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