发明名称 |
PLASMA CVD APPARATUS AND MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIA |
摘要 |
<p>OF THE DISCLOSUREPLASMA CVD APPARATUS AND MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIA5 [Problems to be solved]AplasmaCVD apparatus capable of formingahigh-density and high-hardness thin film on a substrate by lengthening the distance between the cathode and the substrate is provided.10 [Solution]The plasma CVD apparatus according to the present invention includes a cathode electrode 3 disposed inside a chamber 2; an anode electrode 4 disposed so as to surround the periphery of the cathode electrode 3; a holding member15 holding a substrate 1 disposed so as to face the cathode electrode 3 and the anode electrode 4; a plasma wall 8 having a float potential; an AC power supply 5 electrically connected to the cathode electrode 3; a DC power supply 7 electrically connected to the anode electrode 4; and a DC power supply20 12 electrically connected to the substrate 1, wherein the internal diameter of the cylindrical plasma wall 8 is in the range of 100mm to 200mm inclusive, and the distance between the cathode electrode 3 and the substrate 1 is in the range of 200mm to 300mm inclusive.25</p> |
申请公布号 |
SG174008(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
SG20110053782 |
申请日期 |
2009.01.21 |
申请人 |
YOUTEC CO., LTD. |
发明人 |
HONDA, YUUJI;OIKAWA, MASAHISA |
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