FINISHING METHOD FOR A SUBSTRATE OF SILICON-ON-INSULATOR SOI TYPE
摘要
<p>The invention relates to a finishing method for a silicon-on-insulator (SOI) substrate that includes an oxide layer buried between an active silicon layer and a support layer of silicon. The method includes applying the following steps in succession: a first rapid thermal annealing (RTA) of the SOI substrate; a sacrificial oxidation of the active silicon layer of the substrate conducted to remove a first oxide thickness; a second RTA of the substrate; and a second sacrificial oxidation of the active silicon layer conducted to remove a second oxide thickness that is thinner than the first oxide thickness.</p>
申请公布号
SG173527(A1)
申请公布日期
2011.09.29
申请号
SG20110056009
申请日期
2010.03.17
申请人
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
发明人
SCHWARZENBACH, WALTER;KERDILES, SEBASTIEN;REYNAUD, PATRICK;ECARNOT, LUDOVIC;NEYRET, ERIC