FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a field-effect transistor which has a wide process window and high characteristic stability.

SOLUTION: The field-effect transistor includes: a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode for acquiring a current; an active layer provided adjacent to the source electrode and the drain electrode, the active layer being formed of an n-type oxide semiconductor; and a gate insulator layer provided between the gate electrode and the active layer. The field-effect transistor is characterized in that the oxide semiconductor is formed of an n-type doped crystalline compound obtained by introducing at least one of a trivalent cation, a tetravalent cation, a pentavalent cation and a hexavalent cation.

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