TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a transistor which has excellent switching characteristics and high reliability.

SOLUTION: The transistor with a bottom-gate top-contact structure is manufactured by a method including: forming a first wiring layer; forming a first insulating film to cover the first wiring layer; forming a semiconductor layer over the first insulating film; forming a conductive film over the semiconductor layer; and performing at least two stages of etching on the conductive film to form second wiring layers being apart from each other, wherein the two stages of etching include at least a first etching step performed under the condition that the etching rate for the conductive film is higher than the etching rate for the semiconductor layer, and a second etching step performed under the condition that the etching rates for the conductive film and the semiconductor layer are higher than those of the first etching step.

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