| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning composition for sufficiently removing plasma etching residue on a semiconductor substrate without damaging a wiring structure and interlayer insulation structure, and to provide a method of manufacturing a semiconductor device using the cleaning composition. SOLUTION: The cleaning composition for removing plasma etching residue formed on a semiconductor substrate contains (component a) water, (component b) hydroxylamine and/or its salt, (component c) basic compound, (component d) organic acid, (component e) inorganic acid and/or its salt of≥0.1 wt.% and <0.5 wt.%. The pH of the cleaning composition is 6-8. The method of manufacturing a semiconductor device includes a process for cleaning the plasma etching residue formed on the semiconductor substrate with the cleaning composition. COPYRIGHT: (C)2011,JPO&INPIT |
