| 摘要 |
PROBLEM TO BE SOLVED: To provide an advantageous back-illuminated solid-state imaging device, and a method of manufacturing the device. SOLUTION: The back-illuminated solid-state imaging device includes a pixel area 12 where a plurality of pixels 1 are provided, including a photoelectric conversion unit 51 and a signal scanning circuit part 52 on a supporting substrate 72. A light irradiating surface is formed on a substrate surface opposite to the surface of the supporting substrate where the signal scanning circuit part is formed. The signal scanning circuit part 52 is located in an interlayer dielectric 60 on the supporting substrate. The photoelectric conversion unit 51 is located on a semiconductor layer 55 on the interlayer dielectric, and includes a dicing groove 78, a pad 63 provided on the semiconductor layer on the side of the light irradiating surface, and a melting groove 77 formed between the dicing groove and the pad along the dicing groove. COPYRIGHT: (C)2011,JPO&INPIT |
