发明名称 Nonvolatile storage device
摘要 A nonvolatile storage device includes: a plurality of memory mats each including a plurality of memory cells; a plurality of plate electrodes each provided for every individual one of the memory mats and each used for applying a voltage to the memory cells; a power-supply section configured to apply a voltage to each of the plate electrodes; a switch circuit having a plurality of switches provided between the power-supply section and each of the plate electrodes and between the plate electrodes; and a control section configured to control the switch circuit in order to disconnect the plate electrodes from the power-supply section and to connect the plate electrodes to each other in order to carry out electrical charging and discharging operations among the plate electrodes.
申请公布号 US2011235393(A1) 申请公布日期 2011.09.29
申请号 US20110929360 申请日期 2011.01.19
申请人 SONY CORPORATION 发明人 YOSHIHARA HIROSHI;ARIMA TAKAYUKI;ETOU TAKESHI
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
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