发明名称 |
METHOD AND APPARATUS FOR SHAPING A GAS PROFILE NEAR BEVEL EDGE |
摘要 |
A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.
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申请公布号 |
US2011232566(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US201113157122 |
申请日期 |
2011.06.09 |
申请人 |
CHEN JACK;BAILEY III ANDREW D;SHAREEF IQBAL |
发明人 |
CHEN JACK;BAILEY, III ANDREW D.;SHAREEF IQBAL |
分类号 |
B05C11/10 |
主分类号 |
B05C11/10 |
代理机构 |
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代理人 |
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地址 |
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