| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrode structure which can reduce the thickness of a Cu electrode which does not easily generate a crack, a void, and exfoliation in the Cu electrode even if the thickness of the Cu electrode is reduced, and is high in connection strength. SOLUTION: Cu through wiring 75 is formed in a through-hole 72 formed at a cover substrate 71. A Cu electrode 82 is provided at the end of the through wiring 75 on the surface of the cover substrate 71. The entire surface of the Cu electrode 82 is covered with a diffusion prevention film 83 formed of a material having an Sn diffusion coefficient of 3×10<SP>-23</SP>cm<SP>2</SP>/sec or lower, for example, Ti and Ni. A wettability improving layer 84 formed of Au is formed on the diffusion prevention film 83. A connecting solder layer 85 formed of Au-Sn solder is formed thereon. COPYRIGHT: (C)2011,JPO&INPIT |
