| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser structure which has high tunneling efficiency, in a tunnel junction layer and in which light confinement or absorption is less likely to occur in the tunnel junction layer. SOLUTION: The semiconductor laser structure includes a plurality of laser structure units 101 and 103 each of which is a laminate of (a) n-type clad layers 2, 8, (b) light-emitter layers 3, 4, 5, 9, 10, 11, and (c) p-type clad layers 5, 12. A tunnel junction layer 7, made up of a p-type conducting type layer 7a and an n-type conducting type layer 7b is provided between the laser structure units 101 and 103. A band gap energy within at least one of the p- and n-type conducting type layers 7a and 7b is not uniform, and the band gap energy at an interface between the p- and n-type conduction type layers 7a and 7b is smaller than the average value of band gap energies of the tunnel junction layer 7. COPYRIGHT: (C)2011,JPO&INPIT
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