| 摘要 |
Each of a plurality of gate driving parts outputs a first potential (2 V) during a period in which the gates of a plurality of thyristors belonging to the corresponding set are driven (S1N=Low) and outputs a second potential (5 V) that is higher than the first potential at a rising part of the anode driving voltage during a period in which the gates of a plurality of thyristors belonging to the corresponding set are not driven (S1N=High). Each of a plurality of gate driving parts outputs a third potential (3 V) that is lower than the second potential at periods other than the rising part of the anode driving voltage during a period in which the gates of a plurality of thyristors belonging to the corresponding set are not driven (S1N=High).
|
