Semiconductor Devices Including Doped Metal Silicide Patterns and Related Methods of Forming Such Devices

摘要

Provided are a semiconductor device and a method of forming the same. The method includes forming an interlayer dielectric on a semiconductor substrate, forming a contact hole in the interlayer dielectric to expose the semiconductor substrate, forming a metal pattern including a dopant on the exposed semiconductor substrate, and performing a heat treatment process to react the semiconductor substrate with the metal pattern to form a metal silicide pattern. The heat treatment process includes diffuses the dopant into the semiconductor substrate.