发明名称 |
Semiconductor Device And Method Of Fabricating The Same |
摘要 |
A method of fabricating a semiconductor device includes forming an interlayer dielectric on a substrate, the interlayer dielectric including first and second openings respectively disposed in first and second regions formed separately in the substrate; fondling a first conductive layer filling the first and second openings; etching the first conductive layer such that a bottom surface of the first opening is exposed and a portion of the first conductive layer in the second opening remains; and forming a second conductive layer filling the first opening and a portion of the second opening.
|
申请公布号 |
US2011237062(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US201113069848 |
申请日期 |
2011.03.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NA HOONJOO;HYUN SANGJIN;SHIN YUGYUN;PARK HONGBAE;HONG SUGHUN;LEE HYE-LAN;HONG HYUNG-SEOK |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|