发明名称 COMPENSATION OF NON-VOLATILE MEMORY CHIP NON-IDEALITIES BY PROGRAM PULSE ADJUSTMENT
摘要 To program a set of non-volatile storage elements, a set of programming pulses are applied to the control gates (or other terminals) of the non-volatile storage elements. The programming pulses have pulse widths that vary as a function of simulated pulse magnitude data. The programming pulses can also have pulse magnitudes that vary based on measurements taken while testing the set of non-volatile storage elements. In one embodiment, the pulse widths are determined after simulation performed prior to fabrication of the non-volatile storage elements. In another embodiment, the pulse magnitudes are calculated after fabrication of the non-volatile storage elements.
申请公布号 US2011235428(A1) 申请公布日期 2011.09.29
申请号 US201113151938 申请日期 2011.06.02
申请人 MOKHLESI NIMA;ZHAO DENGTAO;CHIN HENRY;SAMADDAR TAPAN 发明人 MOKHLESI NIMA;ZHAO DENGTAO;CHIN HENRY;SAMADDAR TAPAN
分类号 G11C16/10 主分类号 G11C16/10
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