| 摘要 |
Provided are a photoelectric conversion device, the conversion efficiency of which is improved, and a method for manufacturing the photoelectric conversion device. The photoelectric conversion device includes a first semiconductor layer and a second semiconductor layer. In the photoelectric conversion device, the first semiconductor layer has one principal surface on which a plurality of projections are scattered, includes a I-III-VI group compound semiconductor, and has a first conduction type. The second semiconductor layer is disposed on said one principal surface, has a thickness in the normal line direction of said one principal surface, and has a second conduction type different from the first conduction type. Further, a first distance along which each of the projections is projected in the normal line direction is longer than a second distance along which the second semiconductor layer is provided in the normal line direction. |
