| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a shared contact which prevents opening defect of a contact hole and an increase in contact resistance, and prevents degradation of yields caused by generation of a junction leak current. SOLUTION: A source/drain region 106 is formed at both sides of a gate electrode 103 on a semiconductor substrate 100. The shared contact includes a lower level contact 113 that is connected to the source/drain region 106 and not connected to the gate electrode 103, and an upper level contact 118 connected to both the lower contact 113 and the gate electrode 103. COPYRIGHT: (C)2011,JPO&INPIT |
