发明名称 |
SHIELDED ELECTRICAL CONTACT AND DOPING THROUGH A PASSIVATING DIELECTRIC LAYER IN A HIGH-EFFICIENCY CRYSTALLINE SOLAR CELL, INCLUDING STRUCTURE AND METHODS OF MANUFACTURE |
摘要 |
Solar cell structures and formation methods which utilize the surface texture in conjunction with a passivating dielectric layer to provide a practical and controllable technique of forming an electrical contact between a conducting layer and underlying substrate through the passivating dielectric layer, achieving both good surface passivation and electrical contact with low recombination losses, as required for high efficiency solar cells. The passivating dielectric layer is intentionally modified to allow direct contact, or tunnel barrier contact, with the substrate. Additional P-N junctions, and dopant gradients, are disclosed to further limit losses and increase efficiency. |
申请公布号 |
WO2011119910(A2) |
申请公布日期 |
2011.09.29 |
申请号 |
WO2011US29911 |
申请日期 |
2011.03.25 |
申请人 |
TETRASUN, INC.;CRAFTS, DOUGLAS;SCHULTZ-WITTMAN, OLIVER |
发明人 |
CRAFTS, DOUGLAS;SCHULTZ-WITTMAN, OLIVER |
分类号 |
H01L31/042;H01L31/0236;H01L31/06;H01L31/18 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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