| 摘要 |
Phase change memory (PCM) device structures are described, in which the phase change material is seamless, thereby obviating void issues that are associated with decreased device performance. Such PCM device structures can be readily formed by a trench technique in which phase change material is conformally deposited on trench side wall and bottom surfaces, followed by removal of the phase change material from the bottom surface, deposition of a dielectric passivation layer and thereafter oxide and/or nitride material, followed by CMP to remove dielectric and oxide/nitride material, and expose top surfaces of the phase change material. A top electrode then is formed in contact with the exposed top surfaces of the phase change material to provide a top electrode/PCM device structure including the seamless PCM material. |
