发明名称 |
HIGH-DENSITY MEMORY DEVICE |
摘要 |
<p>A memory device and a method of forming the same are provided. The memory device includes a substrate; a set of electrodes disposed on the substrate; a dielectric layer formed between the set of electrodes; and a transition metal oxide layer formed between the set of electrodes, the transition metal oxide layer configured to undergo a metal-insulator transition (MIT) to perform a read or write operation.</p> |
申请公布号 |
KR20110106795(A) |
申请公布日期 |
2011.09.29 |
申请号 |
KR20110020313 |
申请日期 |
2011.03.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GUHA SUPRATIK;JENKINS KEITH AELWYN;BARWICZ TYMON |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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