发明名称 |
LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, HYBRID DETECTING DEVICE, PHOTO SENSOR DEVICE, AND MANUFACTURING METHOD FOR LIGHT-RECEIVING ELEMENT ARRAY |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-receiving element and a light-receiving element array that have high light-receiving sensitivity in a near-infrared range, a manufacturing method for the light-receiving element array, a hybrid detecting device, and an optical sensor device. <P>SOLUTION: A light-receiving layer 3 having a band-gap wavelength of 1.65 to 3.0 μm is composed of a type 2 MQW formed of (GaAsSb/InGaAs) or (GaAsSb/InGaAsN (P, Sb)). Light-receiving elements are separated from adjacent light-receiving elements via grooves or impurity concentration distributions. An electrode 11 for each light-receiving element is in ohmic contact with an n-type region 6 formed on a cap layer for each light-receiving element. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011192838(A) |
申请公布日期 |
2011.09.29 |
申请号 |
JP20100058396 |
申请日期 |
2010.03.15 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
NAGAI YOICHI;INOGUCHI YASUHIRO;INADA HIROSHI;NAKAHATA HIDEAKI;AKITA KATSUSHI;ISHIZUKA TAKASHI;FUJII KEI |
分类号 |
H01L31/10 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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