发明名称 |
Methods of Manufacturing Stacked Semiconductor Devices |
摘要 |
A stacked semiconductor device that is reliable by forming an insulating layer on a lower memory layer and by forming a single crystalline semiconductor in portions of the insulating layer. A method of manufacturing the stacked semiconductor device, including: providing a lower memory layer including a plurality of lower memory structures; forming an insulating layer on the lower memory layer; forming trenches by removing portions of the insulating layer; forming a preparatory semiconductor layer for filling the trenches; and forming a single crystalline semiconductor layer by phase-changing the preparatory semiconductor layer.
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申请公布号 |
US2011237055(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US201113053291 |
申请日期 |
2011.03.22 |
申请人 |
SON YONG-HOON;CHOI SI-YOUNG;LEE MYOUNG-BUM;HWANG KI-HYUN;BAIK SEUNG-JAE;HAN JEONG HEE |
发明人 |
SON YONG-HOON;CHOI SI-YOUNG;LEE MYOUNG-BUM;HWANG KI-HYUN;BAIK SEUNG-JAE;HAN JEONG HEE |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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地址 |
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