发明名称 |
Methods of Forming Recessed Channel Array Transistors and Methods of Manufacturing Semiconductor Devices |
摘要 |
In methods of manufacturing a recessed channel array transistor, a recess may be formed in an active region of a substrate. A plasma oxidation process may be performed on the substrate to form a preliminary gate oxide layer on an inner surface of the recess and an upper surface of the substrate. Moistures may be absorbed in a surface of the preliminary gate oxide layer to form a gate oxide layer. A gate electrode may be formed on the gate oxide layer to fill up the recess. Source/drain regions may be formed in an upper surface of the substrate at both sides of the gate electrode. Thus, the oxide layer may have a uniform thickness distribution and a dense structure.
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申请公布号 |
US2011237037(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US201113151494 |
申请日期 |
2011.06.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK TAI-SU;OH JUNG-SUP;LEE GUN-JOONG;AN JUNG-SOO;LEE DONG-KYU;PARK JUNG-GEUN;RYU JEONG-DO;KIM DONG-CHAN;JEONG SEONG-HOON;CHOI SI-YOUNG;SHIN YU-GYUN;YOO JONG-RYEOL;KANG JONG-HOON |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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