发明名称 METHOD FOR CHARACTERISATION OF DIELECTRIC LAYERS BY ULTRAVIOLENT PHOTO-EMISSION SPECTROSCOPY
摘要 The electron affinity of thick dielectrics, of thickness greater than 10 nanometres, is measured by applying a polarisation voltage varying between −4V and −40V, for example, and by taking several measuring points to determine a reference value of the photo-emission threshold (ES), applying linear regression to an adjustment straight line (10) linking the measured thresholds (11) to the respective values of the square root of the voltage V.
申请公布号 US2011233398(A1) 申请公布日期 2011.09.29
申请号 US200913063059 申请日期 2009.09.15
申请人 COMM. A L'EMERGIE ATOMIQUE ET AUX ENERGIES ALT. 发明人 MARTINEZ EUGENIE;GUEDJ CYRIL
分类号 G01N23/225 主分类号 G01N23/225
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