| 摘要 |
According to one embodiment, a nonvolatile memory device includes a first electrode, a second electrode, a resistance change portion and a select element. The resistance change portion is provided between the first electrode and the second electrode and configured to transition between a first resistance state and a second resistance state. The select element is provided between the resistance change portion and the first electrode and has a p-layer including a p-type semiconductor, an i-layer including an intrinsic semiconductor, and an n-layer including an n-type semiconductor. The select element contains an impurity having a smaller bandgap energy than the intrinsic semiconductor, and a concentration peak of the impurity in the i-layer is placed in a center portion of layer thickness of the i-layer.
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