| 摘要 |
<p>A trench type semiconductor device having low gate resistance and manufacturing method thereof and an element structure of power semiconductor device and a device distribution are provided, the semiconductor power device has: a buried trench type gate (250) have titanium/nitride titanium/tungsten; a NSG layer (270) is located on the top part; the distribution of the buried trench type gate (250) is each standard trench gate having a buried trench type gate (250), or ten standard trench gates having a buried trench type gate (250); the number of the buried trench type gate (250) inverses the width of the element standard trench type gate and inverses the value of the gate resistance. The device and the manufacturing method thereof can reduce the inner gate resistance and can not influence the density of the element at the same time, the manufacturing method is simple and is applicable to manufacture. The method can be applicable to different trench type MOSFET, for example: a P-type and N-type low voltage and a high voltage device; a P-type and N-type IGBT; a high voltage IC.</p> |
