PROCESS AND APPARATUS FOR DEPOSITION OF MULTICOMPONENT SEMICONDUCTOR LAYERS

摘要

The invention relates to a method for depositing multicomponent semiconductor layers, in particular III-V epitaxial layers on at least one substrate (4), wherein process gases are introduced by means of a gas inlet member (5) into a process chamber (2), in which at least one substrate (4) is located on a susceptor (3), wherein in a deposition step at least one of said process gases decompose pyrolytically inside of the heated process chamber (2) into a first decomposition product, which forms together with a second decomposition product of a second process gas a layer on the surface of the heated substrate (4) and adheres to surfaces of the process chamber (2), wherein after or prior to the deposition step in an etching step the adherences are removed by introducing a purge gas containing a reactive substance into the process chamber (2.) To clean a substrate prior to the deposition process the reactive substance is formed by free radicals and the substrate is formed by a material, which is not affected by the free radicals while being exposed to the purge gas prior to the growth of the layer.