发明名称 IRREGULAR-SURFACE FORMING METHOD USING PLASMA-ETCHING PROCESS, AND ELECTRODE MEMBER
摘要 <p>Disclosed are an irregular-surface forming method that uses a plasma-etching process by which a substrate having a predetermined irregular surface is stably and precisely attained; and an electrode member attained by such a forming method. When implementing the plasma-etching process, the irregular-surface forming method includes a fine, irregular surface, and forms a predetermined irregular-surface pattern on a substrate, using a partially oxidized metallic salt film as a resistor. The method includes a first process that coats a liquid material containing metallic salt to form a metallic salt film on a substrate; a second process that forms a fine, irregular surface on the metallic-salt film, and partially oxidizes for resistivity; and a third process that forms on the substrate, along with resist, a predetermined irregular surface using a plasma-etching process on the substrate.</p>
申请公布号 WO2011118238(A1) 申请公布日期 2011.09.29
申请号 WO2011JP50020 申请日期 2011.01.05
申请人 LINTEC CORPORATION;NAGANAWA SATOSHI;KONDO TAKESHI 发明人 NAGANAWA SATOSHI;KONDO TAKESHI
分类号 H01L21/3065 主分类号 H01L21/3065
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