SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a semiconductor device (1) having a principal surface (2A) with an off angle of at least -3° and up to +5° from a (0-33-8) surface in a <01-10> direction. The device is provided with a substrate (2) comprising silicon carbide, a p-type layer (4) formed by epitaxial growth on the principal surface (2A) of the substrate (2) and comprising silicon carbide, and an oxide layer (8) formed so as to abut the surface of the p-type layer (4). In addition, the maximum value for nitrogen atom concentration in the region within 10nm of the interface between the p-type layer (4) and the oxide layer (8) is at least 1x1021cm-3.