METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE TREATMENT SYSTEM

摘要

PROBLEM TO BE SOLVED: To stably grow a metal film except Si by using a liquid raw material. SOLUTION: This method includes the steps of: conducting the first pretreatment of terminating the surface of the first metal film that has been formed on a substrate with a hydroxy group; conducting the second pretreatment of supplying a hydrogen-containing gas to the first metal film after the first pretreatment; and forming the second metal film on the first metal film after the second pretreatment. COPYRIGHT: (C)2011,JPO&INPIT