| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for correctly and speedily measuring any stepped structural shape such as depth in a hole of high aspect ratio made on a material through which visible light, far-red light or infrared light transmits. SOLUTION: The method includes: applying light L for measuring visible light, far-red light or infrared light from a backside 103 of a silicon wafer 101 with a non-penetrated via 104 formed; measuring an apparent shape of the non-penetrated via 104 by measuring the position where the measuring light L connects focal point to both surface 102 on the silicon wafer 101 and bottom surface 105 on the non-penetrated via 104 through confocal measuring method; and calculating an actual shape of the non-penetrated via 104 by converting a measured shape, using either previously-obtained refractive index of the silicon wafer 101 or the refractive index of the silicon wafer 101 measured by using refractometry device for measuring any refractive index. COPYRIGHT: (C)2011,JPO&INPIT
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