发明名称 |
DUAL GATE OXIDE TRENCH MOSFET WITH CHANNEL STOP TRENCH AND THREE OR FOUR MASKS PROCESS |
摘要 |
A semiconductor device and fabrication methods are disclosed. The device includes a plurality of gate electrodes formed in trenches located in an active region of a semiconductor substrate. A first gate runner is formed in the substrate and electrically connected to the gate electrodes, wherein the first gate runner surrounds the active region. A second gate runner is connected to the first gate runner and located between the active region and a termination region. A termination structure surrounds the first and second gate runners and the active region. The termination structure includes a conductive material in an insulator-lined trench in the substrate, wherein the termination structure is electrically shorted to a source or body layer of the substrate thereby forming a channel stop for the device.
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申请公布号 |
US2011233667(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US20100782573 |
申请日期 |
2010.05.18 |
申请人 |
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED |
发明人 |
TAI SUNG-SHAN;LUI SIK;WANG XIAOBIN |
分类号 |
H01L29/78;H01L21/336;H01L27/088 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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