发明名称 |
SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE |
摘要 |
There is provided a semiconductor device that includes a III-V Group compound semiconductor having a zinc-blende-type crystal structure, an insulating material being in contact with the (111) plane of the III-V Group compound semiconductor, a plane of the III-V Group compound semiconductor equivalent to the (111) plane, or a plane that has an off angle with respect to the (111) plane or the plane equivalent to the (111) plane, and an MIS-type electrode being in contact with the insulating material and including a metal conductive material. |
申请公布号 |
US2011233689(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US200913133092 |
申请日期 |
2009.11.27 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED;THE UNIVERSITY OF TOKYO;NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
HATA MASAHIKO;FUKUHARA NOBORU;YAMADA HISASHI;TAKAGI SHINICHI;SUGIYAMA MASAKAZU;TAKENAKA MITSURU;YASUDA TETSUJI;MIYATA NORIYUKI;ITATANI TARO;ISHII HIROYUKI;OHTAKE AKIHIRO;NARA JUN |
分类号 |
H01L29/78;H01L21/20;H01L21/336;H01L29/04;H01L29/20 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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