发明名称 |
PROTECTION AGAINST CHARGING DAMAGE IN HYBRID ORIENTATION TRANSISTORS |
摘要 |
In a method of fabricating a CMOS structure, a bulk device can be formed in a first region in conductive communication with an underlying bulk region of the substrate. A first gate conductor may overlie the first region. An SOI device can be formed which has a source drain conduction path in a SOI layer, i.e., a semiconductor layer that is separated from the bulk region by a buried dielectric region. The crystal orientations of the SOI layer and the bulk region can be different. A first diode can be formed in a second region of the substrate in conductive communication with the bulk region. The first diode may be connected in a reverse-biased orientation to a first gate conductor above the SOI layer, such that a voltage on the gate conductor that exceeds the breakdown voltage can be discharged through the first diode to the bulk region of the substrate. A second diode may be formed in a third region of the substrate in conductive communication with the bulk region. The second diode may be connected in a reverse-biased orientation to a source region or a drain region of an NFET. |
申请公布号 |
EP2011208(A4) |
申请公布日期 |
2011.09.28 |
申请号 |
EP20070759794 |
申请日期 |
2007.03.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HOOK, TERENCE B.;MOCUTA, ANDA C.;SLEIGHT, JEFFREY W.;STAMPER, ANTHONY K. |
分类号 |
H02H9/00;H01L27/02;H01L27/12 |
主分类号 |
H02H9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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