摘要 |
<p>There is provided a field emission device (100) including: a first substrate (110) on which a gate electrode line (122), a cathode line (126), and an electron emission source (128) are formed; a second substrate (170) facing and spaced apart from the first substrate (110), and on which an anode (172) and a phosphor layer (174) are formed; and a side frame (130) surrounding an area between the first substrate (110) and the second substrate (170), and forming a sealed internal space, wherein the first substrate (110) is offset from the second substrate (170) by a predetermined length in a first direction perpendicular to a direction where the first substrate (110) and the second substrate (170) are spaced apart from each other, and a rear terminal part (119) for applying a voltage to the gate electrode line (122) and the cathode line (126) is formed on a protruding region (110A) protruding by the predetermined length, wherein an end of an anode terminal part (140) for applying a voltage to the anode (172) contacts the anode (172), and the other end of the anode terminal part (140) is exposed to the outside of the side frame (130).</p> |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, HYUN-SEUNG;KIM, JAI-KYUNG;WON, YONG-GUN;RYU SEUNG-KWON;CHANG, DONG-SU |