发明名称 Field emission device
摘要 <p>There is provided a field emission device (100) including: a first substrate (110) on which a gate electrode line (122), a cathode line (126), and an electron emission source (128) are formed; a second substrate (170) facing and spaced apart from the first substrate (110), and on which an anode (172) and a phosphor layer (174) are formed; and a side frame (130) surrounding an area between the first substrate (110) and the second substrate (170), and forming a sealed internal space, wherein the first substrate (110) is offset from the second substrate (170) by a predetermined length in a first direction perpendicular to a direction where the first substrate (110) and the second substrate (170) are spaced apart from each other, and a rear terminal part (119) for applying a voltage to the gate electrode line (122) and the cathode line (126) is formed on a protruding region (110A) protruding by the predetermined length, wherein an end of an anode terminal part (140) for applying a voltage to the anode (172) contacts the anode (172), and the other end of the anode terminal part (140) is exposed to the outside of the side frame (130).</p>
申请公布号 EP2369610(A1) 申请公布日期 2011.09.28
申请号 EP20110159076 申请日期 2011.03.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, HYUN-SEUNG;KIM, JAI-KYUNG;WON, YONG-GUN;RYU SEUNG-KWON;CHANG, DONG-SU
分类号 H01J5/52;H01J29/92;H01J31/12;H01J63/02 主分类号 H01J5/52
代理机构 代理人
主权项
地址