| 摘要 |
A light emitting diode according to the embodiment includes a light emitting structure (145) including a first conductive semiconductor layer (130), an active layer (140) on the first conductive semiconductor layer, a second conductive semiconductor layer (150) on the active layer, a superlattice structure layer (160) on the second conductive semiconductor layer, and a third conductive semiconductor layer (170) on the superlattice structure layer; a light transmission electrode layer (190) on the light emitting structure; a first electrode (180) connected to the first conductive semiconductor layer; a second electrode (195) electrically connected to the light transmission electrode layer on the light emitting structure; and an insulating layer (120) extending from a lower portion of the second electrode to an upper portion of the second conductive semiconductor layer. |
