发明名称 |
CDTE SEMICONDUCTOR SUBSTRATE FOR EPITAXIAL GROWTH AND SUBSTRATE CONTAINER |
摘要 |
<p>Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth. A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 µm × 10 µm when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.</p> |
申请公布号 |
EP2369041(A1) |
申请公布日期 |
2011.09.28 |
申请号 |
EP20100820681 |
申请日期 |
2010.09.30 |
申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
SUZUKI, KENJI;TANIGUCHI, HIDEYUKI;KURITA, HIDEKI;HIRANO, RYUICHI |
分类号 |
C30B29/48;C30B25/18;C30B33/00;H01L21/02;H01L21/306;H01L21/36;H01L21/463 |
主分类号 |
C30B29/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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