发明名称 NATURAL SUPERLATTICE HOMOLOGOUS SINGLE CRYSTAL THIN FILM, METHOD FOR PREPARATION THEREOF, AND DEVICE USING SAID SINGLE CRYSTAL THIN FILM
摘要 Disclosed is a natural-superlattice homologous single-crystal thin film, which comprises a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: M<1>M<2>O3 (ZnO)m, wherein M<1> is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M<2> is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices. <IMAGE>
申请公布号 EP1443130(B1) 申请公布日期 2011.09.28
申请号 EP20020779976 申请日期 2002.10.31
申请人 JAPAN SCIENCE AND TECHNOLOGY AGENCY;HOYA CORPORATION 发明人 HOSONO, HIDEO;OTA, HIROMICHI;ORITA, MASAHIRO;UEDA, KAZUSHIGE;HIRANO, MASAHIRO;KAMIYA, TOSHIO
分类号 C30B29/22;C23C16/40;C30B23/02;C30B29/68;H01L21/205;H01L21/336;H01L29/06;H01L29/45;H01L29/49;H01L29/786 主分类号 C30B29/22
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