发明名称 |
METHOD FOR PROCESSING A SILICON-ON-INSULATOR STRUCTURE |
摘要 |
A method is disclosed for processing the cleaved surface of a silicon-on-insulator structure. The silicon-on-insulator structures comprises a handle wafer, a silicon layer, and a dielectric layer between the handle wafer and the silicon layer. The silicon layer has a cleaved surface defining an outer surface of the structure. The methods disclosed include an etching process to reduce the time and cost required to process the silicon-on-insulator structure to remove the surface damage and defects formed when a portion of the donor wafer is separated along a cleave plane from the silicon-on-insulator structure. The method includes, annealing the structure, etching the cleaved surface, and performing a non-contact smoothing process on the cleaved surface. |
申请公布号 |
EP2368264(A1) |
申请公布日期 |
2011.09.28 |
申请号 |
EP20090760424 |
申请日期 |
2009.11.23 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
RIES, MICHAEL J.;STANDLEY, ROBERT W.;LIBBERT, JEFFREY L.;JONES, ANDREW M.;WILSON, GREGORY M. |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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