发明名称 |
Fabrication method of semiconductor device having conductive bumps |
摘要 |
A semiconductor device having conductive bumps and a fabrication method thereof are provided. The fabrication method mainly including steps of: providing a semiconductor substrate having a solder pad and a passivation layer formed thereon with a portion of the solder pads exposed from the passivation layer; disposing a first metal layer on the solder pad and a portion of the passivation layer around the solder pad; disposing a covering layer on the first metal layer and the passivation layer, and forming an aperture in the covering layer to expose a portion of the first metal layer, wherein a center of the aperture is deviated from that of the solder pad; deposing a metal pillar on the portion of the first metal layer; and deposing a solder material on an outer surface of the metal pillar for providing a better buffering effect.
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申请公布号 |
US8026602(B2) |
申请公布日期 |
2011.09.27 |
申请号 |
US20100872164 |
申请日期 |
2010.08.31 |
申请人 |
SILICONWARE PRECISION INDUSTRIES CO., LTD. |
发明人 |
KE CHUN-CHI;HUANG CHIEN-PING |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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