发明名称 |
Thermoelectric cooler for semiconductor devices with TSV |
摘要 |
A thermoelectric structure for cooling an integrated circuit (IC) chip comprises a first type superlattice layer formed on top of the IC chip connected to a first voltage, and a second type superlattice layer formed on the bottom of the IC chip connected to a second voltage, the second voltage being different from the first voltage, wherein an power supply current flows through the first and second type superlattice layer for cooling the IC chip.
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申请公布号 |
US8026567(B2) |
申请公布日期 |
2011.09.27 |
申请号 |
US20080341732 |
申请日期 |
2008.12.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTUIRNG CO., LTD. |
发明人 |
CHANG SHIH-CHENG;PAN HSIN-YU |
分类号 |
H01L35/30;H01L23/373;H01L23/38;H01L23/522;H01L29/06;H01L35/16;H01L35/26 |
主分类号 |
H01L35/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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