发明名称 Thermoelectric cooler for semiconductor devices with TSV
摘要 A thermoelectric structure for cooling an integrated circuit (IC) chip comprises a first type superlattice layer formed on top of the IC chip connected to a first voltage, and a second type superlattice layer formed on the bottom of the IC chip connected to a second voltage, the second voltage being different from the first voltage, wherein an power supply current flows through the first and second type superlattice layer for cooling the IC chip.
申请公布号 US8026567(B2) 申请公布日期 2011.09.27
申请号 US20080341732 申请日期 2008.12.22
申请人 TAIWAN SEMICONDUCTOR MANUFACTUIRNG CO., LTD. 发明人 CHANG SHIH-CHENG;PAN HSIN-YU
分类号 H01L35/30;H01L23/373;H01L23/38;H01L23/522;H01L29/06;H01L35/16;H01L35/26 主分类号 H01L35/30
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