| 摘要 |
A method of manufacturing a resistive divider circuit, includes providing a silicon body having a plurality of opposing pairs of intermediate taps extending therefrom. Each tap comprises a thin silicon stem supporting a relatively wider silicon platform. A silicidation protection (SIPROT) layer is deposited over the body and intermediate taps and then patterned to expose the platform. A silicidation process is performed to silicidate the platform to form a contact pad of relatively low resistivity.
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