发明名称 |
Second Schottky contact metal layer to improve GaN Schottky diode performance |
摘要 |
A Schottky contact is disposed atop a surface of a semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and adjoins the first Schottky contact metal layer. The first Schottky contact metal layer has a lower work function than the second Schottky contact metal layer.
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申请公布号 |
US8026568(B2) |
申请公布日期 |
2011.09.27 |
申请号 |
US20060589124 |
申请日期 |
2006.10.27 |
申请人 |
VELOX SEMICONDUCTOR CORPORATION |
发明人 |
ZHU TING GANG;PABISZ MAREK |
分类号 |
H01L31/07;H01L21/338 |
主分类号 |
H01L31/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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